NEW Genuine Mitsubishi CM1200E4C-34N HV IGBT MODULE Transistor 1200A 1700V
$450.00
254377073945
We provide 6-month warranty for all used products. Before shipping all products carefully tested and packed in hard box with bubble wrap. If you pay with PayPal you can use buyer protection program.
For shipping we use EMS express post (delivery within 5-20 days). By additional request we can use DHL, UPS or FEDex services. In this case price for shipping will be calculated individually.
We accept returns within 15 days after receiving goods.
NEW ORIGINAL GENUINE MITSUBISHI HVIGBT MODULES
CM1200E4C-34N
HIGH POWER SWITCHING
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
- IC: 1200A
- VCES: 1700V
- Insulated Type
- 1-element in a Pack (for brake)
- AISiC Baseplate
- Trench Gate IGBT : CSTBT™
- Soft Reverse Recovery Diode
- APPLICATION: Traction drives, DC choppers, Dynamic braking choppers
New, in factory box.
Original, made in Japan, not Chinese fake!
Typical delivery time:
Economy shipping (Russian Post) Standard Shipping (EMS Express Post) Europe 14-30 days, in rare cases up to 60 days 7-20 days, in very rare cases up to 60 days United States 20-60 days, in rare cases up to 80 days 14-30 days, in rare cases up to 60 days Canada 14-30 days, in rare cases up to 60 days 7-30 days, in rare cases up to 60 days Asia, India, Africa 14-40 days, in rare cases up to 60 days 7-20 days, in very rare cases up to 60 days Australia and Oceania 14-40 days, in rare cases up to 60 days 10-25 days, in rare cases up to 60 days South and Central America 20-60 days, in rare cases up to 80 days 14-30 days, in rare cases up to 60 days Other countries 20-60 days, in rare cases up to 80 days 10-30 days, in rare cases up to 70 days
3 Items
Data sheet
- Brand
- Mitsubishi Electric
- MPN
- CM1200E4C-34N
- Model
- CM1200E4C-34N
- Type
- IGBT
- Country/Region of Manufacture
- Japan
- Number of Pins
- 6
- Custom Bundle
- No
- Collector-Emitter/Drain-Source Voltage
- 1700V
- Continuous Collector/Drain Current
- 1200A
- Function
- Power Transistor
- Transistor Type
- IGBT
- Maximum Collector-Emitter Saturation Voltage
- 2.15V
- Peak Surge Current
- 2400A
- Number of Elements per Chip
- 1
- Collector-Emitter Voltage
- 1700V
- Maximum Base-Emitter Voltage
- 20 V
- Item Height
- 38mm
- Item Width
- 140mm
- Mounting Style
- Surface Mount
- Minimum Operating Temperature
- -40 °C (-40 °F)
- Maximum Operating Temperature
- 125 °C (257 °F)
- Transistor Category
- Power Transistor
- Item Length
- 130mm
- Maximum Power Dissipation
- 6500W
- Maximum DC Collector Current
- 2400A