NEW Genuine Mitsubishi CM1200E4C-34N HV IGBT MODULE Transistor 1200A 1700V
450,00 $
254377073945
На всё б/у оборудование предоставляется ограниченная шестимесячная гарантия. Перед оправкой всё оборудование тщательно тестируется и упаковывается в жесткие коробки и пазырчатую плёнку.
Для поставки по России и в пределах таможенного союза используются службы СДЭК, ЕМС, Желдорэкспедиция, Деловые Линии и ПЭК. При необходимости Вы можете отправить запрос на доставку другой транспортной компанией.
Возврат товаров принимается в течении 15 дней после получения.
NEW ORIGINAL GENUINE MITSUBISHI HVIGBT MODULES
CM1200E4C-34N
HIGH POWER SWITCHING
INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
- IC: 1200A
- VCES: 1700V
- Insulated Type
- 1-element in a Pack (for brake)
- AISiC Baseplate
- Trench Gate IGBT : CSTBT™
- Soft Reverse Recovery Diode
- APPLICATION: Traction drives, DC choppers, Dynamic braking choppers
New, in factory box.
Original, made in Japan, not Chinese fake!
Typical delivery time:
Economy shipping (Russian Post) Standard Shipping (EMS Express Post) Europe 14-30 days, in rare cases up to 60 days 7-20 days, in very rare cases up to 60 days United States 20-60 days, in rare cases up to 80 days 14-30 days, in rare cases up to 60 days Canada 14-30 days, in rare cases up to 60 days 7-30 days, in rare cases up to 60 days Asia, India, Africa 14-40 days, in rare cases up to 60 days 7-20 days, in very rare cases up to 60 days Australia and Oceania 14-40 days, in rare cases up to 60 days 10-25 days, in rare cases up to 60 days South and Central America 20-60 days, in rare cases up to 80 days 14-30 days, in rare cases up to 60 days Other countries 20-60 days, in rare cases up to 80 days 10-30 days, in rare cases up to 70 days
3 шт.
Характеристики
- Brand
- Mitsubishi Electric
- MPN
- CM1200E4C-34N
- Model
- CM1200E4C-34N
- Type
- IGBT
- Country/Region of Manufacture
- Japan
- Number of Pins
- 6
- Custom Bundle
- No
- Collector-Emitter/Drain-Source Voltage
- 1700V
- Continuous Collector/Drain Current
- 1200A
- Function
- Power Transistor
- Transistor Type
- IGBT
- Maximum Collector-Emitter Saturation Voltage
- 2.15V
- Peak Surge Current
- 2400A
- Number of Elements per Chip
- 1
- Collector-Emitter Voltage
- 1700V
- Maximum Base-Emitter Voltage
- 20 V
- Item Height
- 38mm
- Item Width
- 140mm
- Mounting Style
- Surface Mount
- Minimum Operating Temperature
- -40 °C (-40 °F)
- Maximum Operating Temperature
- 125 °C (257 °F)
- Transistor Category
- Power Transistor
- Item Length
- 130mm
- Maximum Power Dissipation
- 6500W
- Maximum DC Collector Current
- 2400A
254377073945