Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
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  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A

Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A

$350.00
254392562368
Quantity
In Stock

 

We provide 6-month warranty for all used products. Before shipping all products carefully tested and packed in hard box with bubble wrap. If you pay with PayPal you can use buyer protection program.

 

For shipping we use EMS express post (delivery within 5-20 days). By additional request we can use DHL, UPS or FEDex services. In this case price for shipping will be calculated individually.

 

We accept returns within 15 days after receiving goods.

Description:


1700V IHM 130mm chopper IGBT Module with IGBT3, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications.

IGBT,Brake-Chopper 

Summary of Features:

  • Enlarged Diode for regenerative operation
  • High reliability and robust module construction

Benefits:

  • High power density for compact inverter designs
  • Standardized housing

Collector-emittervoltage Tvj = 25°C    1700  V
Continuous DC collectorcurrent TC = 80°C   800A
Continuous DC collectorcurrent TC = 25°C   1200A

Without factory box.


Typical delivery time:

  Economy shipping (Russian Post) Standard Shipping (EMS Express Post) Europe 14-30 days, in rare cases up to 60 days 7-20 days, in very rare cases up to 60 days United States 20-60 days, in rare cases up to 80 days 14-30 days, in rare cases up to 60 days Canada 14-30 days, in rare cases up to 60 days 7-30 days, in rare cases up to 60 days Asia, India, Africa 14-40 days, in rare cases up to 60 days 7-20 days, in very rare cases up to 60 days Australia and Oceania 14-40 days, in rare cases up to 60 days 10-25 days, in rare cases up to 60 days South and Central America 20-60 days, in rare cases up to 80 days 14-30 days, in rare cases up to 60 days Other countries 20-60 days, in rare cases up to 80 days 10-30 days, in rare cases up to 70 days
6 Items

Data sheet

Brand
Infineon
MPN
FD800R17KE3_B2
Model
FD800R17KE3_B2
Type
IGBT
Number of Pins
7
Custom Bundle
No
Modified Item
No
Collector-Emitter/Drain-Source Voltage
1700V
Continuous Collector/Drain Current
800A
Function
Power Transistor
Transistor Type
IGBT
Emitter-Base/Gate-Drain Voltage
20V
Maximum Collector-Emitter Saturation Voltage
2V
Peak Surge Current
1600A
Number of Elements per Chip
1
Collector-Emitter Voltage
1700V
Maximum Base-Emitter Voltage
20 V
Item Height
38mm
Item Width
140mm
Mounting Style
Surface Mount
Minimum Operating Temperature
-40 °C (-40 °F)
Maximum Operating Temperature
125 °C (257 °F)
Series
FD800R17KE3
Transistor Category
Power Transistor
Item Length
130mm
Packaging
Bulk
Maximum Power Dissipation
5200W
Power Dissipation
5200W
Maximum DC Collector Current
1600 A
Maximum Collector-Base Voltage
1700 V