Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
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  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A
  • Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A

Infineon FD800R17KE3_B2 FD800R17KE3B2 IGBT Transistor module 1700V 800A 1200A

350,00 $
254392562368
Количество
In Stock

 

На всё б/у оборудование предоставляется ограниченная шестимесячная гарантия. Перед оправкой всё оборудование тщательно тестируется и упаковывается в жесткие коробки и пазырчатую плёнку.

 

Для поставки по России и в пределах таможенного союза используются службы СДЭК, ЕМС, Желдорэкспедиция, Деловые Линии и ПЭК. При необходимости Вы можете отправить запрос на доставку другой транспортной компанией.

 

Возврат товаров принимается в течении 15 дней после получения.

Description:


1700V IHM 130mm chopper IGBT Module with IGBT3, enlarged diode and AlSiC base-plate - The best solution for your traction and industry applications.

IGBT,Brake-Chopper 

Summary of Features:

  • Enlarged Diode for regenerative operation
  • High reliability and robust module construction

Benefits:

  • High power density for compact inverter designs
  • Standardized housing

Collector-emittervoltage Tvj = 25°C    1700  V
Continuous DC collectorcurrent TC = 80°C   800A
Continuous DC collectorcurrent TC = 25°C   1200A

Without factory box.


Typical delivery time:

  Economy shipping (Russian Post) Standard Shipping (EMS Express Post) Europe 14-30 days, in rare cases up to 60 days 7-20 days, in very rare cases up to 60 days United States 20-60 days, in rare cases up to 80 days 14-30 days, in rare cases up to 60 days Canada 14-30 days, in rare cases up to 60 days 7-30 days, in rare cases up to 60 days Asia, India, Africa 14-40 days, in rare cases up to 60 days 7-20 days, in very rare cases up to 60 days Australia and Oceania 14-40 days, in rare cases up to 60 days 10-25 days, in rare cases up to 60 days South and Central America 20-60 days, in rare cases up to 80 days 14-30 days, in rare cases up to 60 days Other countries 20-60 days, in rare cases up to 80 days 10-30 days, in rare cases up to 70 days
6 шт.

Характеристики

Brand
Infineon
MPN
FD800R17KE3_B2
Model
FD800R17KE3_B2
Type
IGBT
Number of Pins
7
Custom Bundle
No
Modified Item
No
Collector-Emitter/Drain-Source Voltage
1700V
Continuous Collector/Drain Current
800A
Function
Power Transistor
Transistor Type
IGBT
Emitter-Base/Gate-Drain Voltage
20V
Maximum Collector-Emitter Saturation Voltage
2V
Peak Surge Current
1600A
Number of Elements per Chip
1
Collector-Emitter Voltage
1700V
Maximum Base-Emitter Voltage
20 V
Item Height
38mm
Item Width
140mm
Mounting Style
Surface Mount
Minimum Operating Temperature
-40 °C (-40 °F)
Maximum Operating Temperature
125 °C (257 °F)
Series
FD800R17KE3
Transistor Category
Power Transistor
Item Length
130mm
Packaging
Bulk
Maximum Power Dissipation
5200W
Power Dissipation
5200W
Maximum DC Collector Current
1600 A
Maximum Collector-Base Voltage
1700 V